digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2N2417 - 2n2422, a, b silicon unijunction transistor maximum ratings rating symbol value unit power dissipation (1) p d 350 mw rms emitter current i e 70 ma peak pulse emitter current (2) i e 2 amps emitter reverse voltage v b2e 60 volts interbase voltage v b2b1 65 volts operating junction temperature range t j -65 to 175 c storage temperature range t stg -65 to 175 c note 1: derate 2.33mw/c increase in ambient temperature. the total power dissipation must be limited by the external circuitry . note 2: capacitor discharge ? 10f or less, 30 volts or less. electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min typ max unit intrinsic standoff ratio (v b2b1 = 10v) (1) 2N2417, 2N2417a, 2N2417b 2n2418, 2n2418a, 2n2418b 2n2419, 2n2419a, 2n2419b 2n2420, 2n2420a, 2n2420b 2n2421, 2n2421a, 2n2422b 2n2422, 2n2422a, 2n2422b 0.51 0.51 0.56 0.56 0.62 0.62 - - - - - - 0.62 0.62 0.68 0.68 0.75 0.75 - - - - - - interbase resistance (v b2b1 = 3v, i e = 0) 2N2417, 2N2417a, 2N2417b 2n2418, 2n2418a, 2n2418b 2n2419, 2n2419a, 2n2419b 2n2420, 2n2420a, 2n2420b 2n2421, 2n2421a, 2n2422b 2n2422, 2n2422a, 2n2422b r bb 4.7 6.2 4.7 6.2 4.7 6.2 - - - - - - 6.8 9.1 6.8 9.1 6.8 9.1 kohms emitter saturation voltage (v b2b1 = 10v, i e = 50ma) (2) v eb1(sat) - 3.5 - volts modulated interbase current (v b2b1 = 10v, i e = 50ma) i b2(mod) - 15 - ma emitter reverse current (i b1 = 0) v b2e = 60v v b2e = 60v v b2e = 30v 2N2417, 2n2418, 2n2419, 2n2420, 2n2421, 2n2422 2N2417a, 2n2418a, 2n2419a, 2n2420a, 2n2421a, 2n2422a 2N2417b, 2n2418b, 2n2419b, 2n2420b, 2n2421b, 2n2422b i eb2o - - - - - - 2 2 0.2 a peak point emitter current (v b2b1 = 25v) 2N2417, 2n2418, 2n2419, 2n2420, 2n2421, 2n2422 2N2417a, 2n2418a, 2n2419a, 2n2420a, 2n2421a, 2n2422a 2N2417b, 2n2418b, 2n2419b, 2n2420b, 2n2421b, 2n2422b i eb2o - - - - - - 12 12 6 a valley point current (v b2b1 = 20v, r b2 = 100ohms) (2) i v 8 - - ma base-one peak pulse voltage (3) 2N2417, 2n2418, 2n2419, 2n2420, 2n2421, 2n2422 2N2417a, 2n2418a, 2n2419a, 2n2420a, 2n2421a, 2n2422a 2N2417b, 2n2418b, 2n2419b, 2n2420b, 2n2421b, 2n2422b v ob1 - 3 3 - - - - - - v note 1: intrinsic standoff voltage: = v p -v f /v b2b1 , where v p = peak point emitter voltage , v b2b1 = interbase voltage, v f = emitter to base one junction diode drop ( 0.45v @ 10a). note 2: pw 300s, duty cycle 2% to avoid internal heating due to interbase modulation which may result in erroneous readings note 3: base one peak pulse voltage is used to ensure minimum pulse amplitude for applications in scr firing circuits and other types of pulse circuits. sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20121019
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n2646, 2n2647 silicon unijunction transistor available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20121019
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